S.J. Koester, K. Ismail, et al.
Applied Physics Letters
We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias. © 2004 IEEE.
S.J. Koester, K. Ismail, et al.
Applied Physics Letters
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
S.J. Koester, J. Schaub, et al.
DRC 2004
R. Hammond, S.J. Koester, et al.
Electronics Letters