Independent-gate controlled asymmetrical SRAM cells in double-gate MOSFET technology for improved READ stability

Abstract

This paper presents novel asymmetrical SRAM cell topologies in double-gate technology. These cells utilize the independent-gate control to overcome the limitation of conventional device sizing for stability improvement in asymmetrical SRAM cells. We show that optimal READ stability, where the READ stability approaches the HOLD stability, can be achieved with the proposed scheme. Mixedmode device/circuit simulations show that the proposed cell has 1.9X stability improvement over conventional SRAM and 1.5X stability improvement over asymmetrical SRAM with device sizing only. © 2006 IEEE.