Publication
Applied Physics Letters
Paper

Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs

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Abstract

High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.

Date

01 Dec 1990

Publication

Applied Physics Letters

Authors

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