Abstract
This paper provides an overview of IBM's recent results on Ge-on-insulator (GOT) photodetector technology and describes their suitability for use in so-called "in-the-box" massively-parallel optical interconnects.
This paper provides an overview of IBM's recent results on Ge-on-insulator (GOT) photodetector technology and describes their suitability for use in so-called "in-the-box" massively-parallel optical interconnects.