Paper

01 Jan 1984

IIA-7 A GaAs Gate Heterojunction FET-

View publication

Abstract

No abstract available.

Paper

A temperature-independent capacitance in semiconductor-insulator- semiconductor capacitors

T.W. Hickmott, P. Solomon

Journal of Applied Physics

Paper

On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fields

P. Solomon

Applied Physics Letters

Paper

Resonant Fowler-Nordheim tunneling in n^-GaAs-undoped Al _xGa_1-xAs-n⁺GaAs capacitors

T.W. Hickmott, P. Solomon, et al.

Applied Physics Letters

Paper

High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device

K. Seo, Mordehai Heiblum, et al.

IEEE Electron Device Letters

View all publications