Publication
Applied Physics Letters
Paper

Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

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Abstract

Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor- insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.

Date

01 Dec 1991

Publication

Applied Physics Letters

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