Hot Electron Emission Lithography: A method for efficient large area e-beam projection

Abstract

We have developed an electron lithography method, Hot Electron Emission Lithography (HEEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MOS technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 160 nm in a system capable of 90 nm resolution. Further improvements in resolution to 50 nm are possible.