M. Wittmer, F. Legoues, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period sawtooth grating on (100) Si using a combination of holographic lithography and wet chemical etching. The GaAs layers grown by metalorganic chemical vapor deposition on such substrates exhibit a dramatic reduction in the density of threading misfit dislocations, even when the grown layers are thin. Twins and stacking faults are also reduced dramatically by either in situ thermal-cycle growth or ex situ rapid thermal annealing.
M. Wittmer, F. Legoues, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
F. Legoues, B.S. Meyerson, et al.
Physical Review Letters
F. Legoues, W. Krakow, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
S.J. Koester, B.-U. Klepser, et al.
DRC 1998