Publication
Applied Physics Letters
Paper

High-quality GaAs on sawtooth-patterned Si substrates

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Abstract

We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period sawtooth grating on (100) Si using a combination of holographic lithography and wet chemical etching. The GaAs layers grown by metalorganic chemical vapor deposition on such substrates exhibit a dramatic reduction in the density of threading misfit dislocations, even when the grown layers are thin. Twins and stacking faults are also reduced dramatically by either in situ thermal-cycle growth or ex situ rapid thermal annealing.

Date

01 Dec 1991

Publication

Applied Physics Letters

Authors

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