Matthias Gottwald, Guohan Hu, et al.
VLSI Technology and Circuits 2024
Low-field effective hole mobility of highly strained (∼ 2.4%, biaxial) germanium-channel (7.8 nm-thick) p-MOSFETs with high-κ/metal gate stack has been experimentally investigated. Devices with various ultrathin strained-Si cap layer thicknesses, as thin as ∼ 8 Å, show excellent capacitance-voltage characteristics with no hysteresis or frequency dispersion and hole mobility enhancement of more than 6.5X over Si universal and 2.3X over similar devices with no strained-Si cap, at E eff = 0.6 MV/cm. The influence of the strained-Si cap thickness on the hole mobility is also studied. The mobility increases with increasing Si cap thickness up to ∼1.8 nm (with a peak mobility of 940 cm 2/Vs at this cap thickness) consistent with a reduction in remote Coulombic scattering. © 2011 IEEE.
Matthias Gottwald, Guohan Hu, et al.
VLSI Technology and Circuits 2024
Biswajit Sahoo, Christopher Safranski, et al.
MMM 2024
Dinkar V. Singh, Judy L. Hoyt, et al.
IEEE Transactions on Electron Devices
Pouya Hashemi, Winston Chern, et al.
IEEE Electron Device Letters