About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Semiconductor Science and Technology
Paper
Interdiffusion in strained Si/strained SiGe epitaxial heterostructures
Abstract
The Si-Ge interdiffusivity in epitaxial strained Si/Si1-yGey/strained Si/relaxed Si1-x0Gex0 and strained Si/relaxed Si 1-x0Gex0 heterostructures is investigated for Ge fractions between 0 and 0.56 over the temperature range of 770-920 °C. Si-Ge interdiffusivity is found to increase by 2.2× for every 10% increase in local Ge fraction for interdiffusion in strained Si/relaxed SiGe structures. Significantly enhanced Si-Ge interdiffusion is observed in structures with Si1-yGey layers under biaxial compressive strain. The interdiffusivity increases by 4.4× for every 0.42% increase in the magnitude of biaxial compressive strain. These results were incorporated into an interdiffusion model that successfully predicts the interdiffusion in epitaxial SiGe heterostructures. © 2007 IOP Publishing Ltd.