Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Ahmet S. Özean, Karl F. Ludwig Jr., et al.
Journal of Applied Physics
Alan Molinari, Federico Balduini, et al.
ACS Applied Electronic Materials
Simon Gaudet, Koen De Keyser, et al.
JVSTA