Contacts in advanced CMOS: History and emerging challenges
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
Rubab Ume, Haibo Gong, et al.
ECS J. Solid State Sci. Technol.
Ahmet S. Ozcan, Mehmet S. Ozcan
Frontiers in Synaptic Neuroscience
Lukas Jablonka, Tomas Kubart, et al.
JVSTB