Titanium silicide can be used in micro-electronic applications to reduce the contact resistance for silicon-based transistors. This paper gives an overview of the preferred orientation between the Ti-silicide films and Si(0 0 1) and Si(1 1 1)-oriented substrates. We report on several axiotaxial alignments, which are observed in addition to the previously known epitaxial alignments. The axiotaxial textures can be related to the epitaxial one and its stability is interpreted through plane-to-plane alignment across the interface. Reducing the Ti film thickness from 30 to 8 nm favours the epitaxial alignment instead of the axiotaxial alignments.