GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

Abstract

For heterogeneous integration of IIIV compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge strain compensating buffer on Si to GaAs heteroepitaxy. The whole growth process, including high-k gate oxide deposition, is performed in a 200 mm MBE cluster tool. Thin (≤0.3 μm), temperature-graded Ge buffers are investigated and the influence of the substrate temperature during Ge nucleation and anneals is studied. Using such a buffer, GaAs was grown on 200 mm Si wafers and characterized structurally and electrically using MOS capacitors. © 2010 Elsevier B.V. All rights reserved.