Publications

8 results for C. Gerl

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In _0.53Ga _0.47As metal-oxide-semiconductor field-effect-transistors
- - Mario El Kazzi
  - Lukas Czornomaz
  - et al.
- 2012
- Applied Physics Letters
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- - M. El Kazzi
  - D.J. Webb
  - et al.
- 2011
- Microelectronic Engineering
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- - M. Richter
  - Christophe Rossel
  - et al.
- 2011
- Journal of Crystal Growth
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- - Marinus Hopstaken
  - Michael Gordon
  - et al.
- 2010
- Journal of Vacuum Science and Technology B
Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- - Chiara Marchiori
  - Ed Kiewra
  - et al.
- 2010
- Applied Physics Letters
Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- - Marinus Hopstaken
  - Dirk Pfeiffer
  - et al.
- 2010
- ECS Transactions
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- - C. Marchiori
  - D.J. Webb
  - et al.
- 2009
- Journal of Applied Physics
CMOS scaling beyond 22 nm node
- - D.K. Sadana
  - S.W. Bedell
  - et al.
- 2009
- ECS Meeting 2009