F. Allibert, Pierre Morin, et al.
S3S 2014
Limitations of conventional strain engineering methods for fully-depleted SOI structure are reviewed and methods to extend these approaches to future FDSOI devices are discussed. The application of global strain engineering combined with biaxial to uniaxial strain conversion is shown to be promising. Finally, methods to utilize oxidation-induced strain engineering are introduced. ©The Electrochemical Society.
F. Allibert, Pierre Morin, et al.
S3S 2014
Ning Li, Stephen Bedell, et al.
SID International Symposium 2013
Kam-Leung Lee, Isaac Lauer, et al.
IWJT 2010
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011