ECS Transactions
Conference paper

Strain engineering for fully-depleted SOI devices

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Limitations of conventional strain engineering methods for fully-depleted SOI structure are reviewed and methods to extend these approaches to future FDSOI devices are discussed. The application of global strain engineering combined with biaxial to uniaxial strain conversion is shown to be promising. Finally, methods to utilize oxidation-induced strain engineering are introduced. ©The Electrochemical Society.