Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
In-situ X-ray diffraction during rapid thermal annealing at rates from 3 to 20°C s-1 was used to study the formation of titanium silicide phases from a thin film of Ti and doped single-crystal or undoped polycrystalline silicon substrates. In all cases, a metal-rich silicide (identified as either Ti5Si4 or Ti5Si3) was the first crystalline phase to form between 500 and 550°C, followed by C49-TiSi2 between 575 and 600°C. The formation of C49-TiSi2 completely consumed the metal-rich silicide before transforming into the low-resistance C54-TiSi2 phase at approximately 800°C. These results indicate that while there is sufficient thermodynamic driving forces to nucleate both a metal-rich silicide and C49-TiSi2 the subsequent growth of C49-TiSi2, is kinetically favored over the growth of Ti5Si4 or Ti5Si3.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Lawrence Suchow, Norman R. Stemple
JES
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
J.L. Hurd, K.P. Rodbell, et al.
Applied Physics Letters