A method of producing fine-grained PblnAu thin films reported by Huang and co-workers has been evaluated for use in Josephson technology integrated circuits. Both junction-related and nonjunction characteristics of the base electrode layer were considered. It was found necessary to interchange the order of deposition of two of the layers in the vertical structure and to modify the homogenization step in the base electrode process. The fine grain size of the films was found to be due to the presence of a layer of Auln2precipitates which impede grain growth. © 1983, American Vacuum Society. All rights reserved.