J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. For T [110] we have observed a red shift of several peaks and an increase in the intensities of several symmetry-forbidden transitions; effects not seen for T [100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T [110]. © 1991 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A. Reisman, M. Berkenblit, et al.
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Robert W. Keyes
Physical Review B