Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are discussed in relationship to the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T.N. Morgan
Semiconductor Science and Technology
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Kigook Song, Robert D. Miller, et al.
Macromolecules