Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are discussed in relationship to the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.
T.N. Morgan
Semiconductor Science and Technology
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Imran Nasim, Melanie Weber
SCML 2024
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics