Publication
Solid State Electronics
Paper

Experimental and theoretical study of scattering mechanisms for 2D excitons in GaAs/AlGaAs quantum wells

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Abstract

We investigated the mobility of two-dimensional excitons in GaAs/AlxGa1-xAs quantum wells by a time-of-flight method based on microstructured masks. The mobility of excitons strongly increases with growing well width. This dependence on well width as well as the temperature dependence can be described by theoretical model calculations including barrier-alloy-disorder scattering, acoustic-deformation-potential scattering, polar-optical scattering and interface-roughness scattering. © 1989.

Date

01 Jan 1989

Publication

Solid State Electronics

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