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The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
Hussein I. Hanafi, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits
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IEEE Journal of Solid-State Circuits
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