Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Direct experimental evidence for the existence of electron-hole drops in Si has been obtained from the current pulses produced when they dissociate in the high electric field of a p-n junction. From these results we also determine the drop radius, which is typically about 0.75 μ in this experiment. © 1975.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
J. Tersoff
Applied Surface Science
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
T.N. Morgan
Semiconductor Science and Technology