Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Paper
Electron-hole drops in silicon
Abstract
Direct experimental evidence for the existence of electron-hole drops in Si has been obtained from the current pulses produced when they dissociate in the high electric field of a p-n junction. From these results we also determine the drop radius, which is typically about 0.75 μ in this experiment. © 1975.
Related
Revanth Kodoru, Atanu Saha, et al.
arXiv
J.H. Stathis, R. Bolam, et al.
INFOS 2005
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992