Shaoning Yao, Wei-Tsu Tseng, et al.
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Paper
Electron-hole drops in silicon
Abstract
Direct experimental evidence for the existence of electron-hole drops in Si has been obtained from the current pulses produced when they dissociate in the high electric field of a p-n junction. From these results we also determine the drop radius, which is typically about 0.75 μ in this experiment. © 1975.
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