D.M. Tanenbaum, C.W. Lo, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Electromigration in 0.15-10 μm wide and 0.3 μm thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 255-405°C. For wide polycrystalline lines (>1 μm), the dominant diffusion mechanism is a mixture of grain boundary and surface diffusion, while in narrow lines (<1 μm) the dominant mechanism is surface transport. The activation energy for grain-boundary transport is approximately 0.2 eV higher than that of surface transport. © 1999 American Institute of Physics.
D.M. Tanenbaum, C.W. Lo, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.R. Yu, J. Doyle, et al.
VMIC 2005
C.-K. Hu, L. Gignac, et al.
Journal of Applied Physics
R. Rosenberg, A.F. Mayadas, et al.
Surface Science