Publication
Microelectronic Engineering
Paper

Electrical resistivity and radiation damage in boro-hydro-nitride x-ray lithography mask substrates

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Abstract

The dc electrical resistivity of LPCVD boro-hydro-nitride films was measured for various film deposition parameters, and was found to be directly related to the optical transparency as well as the mechanical stress of the x-ray mask membranes prepared from these films. The influence of the film's hydrogen and boron content on electrical resistivity is also being reported. Experimental results describe the effect of x-ray radiation on the film's chemical composition, Young's modulus and electrical resistivity. Radiation effects relevant to x-ray lithography, which are mechanical distortion and optical transparency of the mask membranes prepared from those films, are also described. Experimental evidence suggests that the radiation damage relevant to x-ray lithography in the mask membranes is directly related to their initial electrical resistivity (measured before irradiation). © 1987.

Date

01 Jan 1987

Publication

Microelectronic Engineering