Steven J. Koester, Albert M. Young, et al.
IBM J. Res. Dev
We present a study of the effects of substrate orientation and longitudinal channel stress on the performance of extremely thin silicon-on-insulator (ETSOI) MOSFETs with gate lengths down to 25 nm. We find that short-channel electron and hole mobilities follow the long-channel mobility trends versus substrate orientation and longitudinal channel stress. We show that with respect to (100) silicon-on-insulator (SOI) substrates, short-channel ETSOI MOSFETs on (110) SOI substrates lead to 25% enhancement of the p-channel FET drive current at the expense of 12% degradation of the n-channel FET drive current at a fixed off-current of 100 nA/ μm and a supply voltage of 1 V. Finally, we estimate that an ETSOI complementary metaloxidesemiconductor (CMOS) on (110) SOI substrates should lead to 10% faster ring oscillators compared with those on (100) SOI wafers, which also implies that (100)-oriented wafers with (110) sidewalls are a better choice for fabricating nonplanar FinFETs and trigate CMOS circuits. © 2006 IEEE.
Steven J. Koester, Albert M. Young, et al.
IBM J. Res. Dev
Amlan Majumdar, Xinlin Wang, et al.
IEEE Electron Device Letters
Katherine L. Saenger, Stephen W. Bedell, et al.
MRS Spring Meeting 2008
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008