S. Narasimha, K. Onishi, et al.
IEDM 2006
In this letter, the effect of longitudinal uniaxial mechanical stress on electron mobility in high-performance fully depleted ultrathin silicon-on-insulator nFETs with a raised source/drain (RSD) architecture and channel lengths ranging from 1μ (long channel) to 30 nm (deeply scaled) is reported. Longitudinal uniaxial stress in the channel was achieved using a stressed nitride contact liner technique. A dR/dL method was used to minimize errors in the mobility extraction due to uncertainties in external resistance and channel length. Significant mobility enhancement of 1.6-1.8 times was achieved despite the use of an RSD and strong channel doping of roughly 5 × 1018 cm-3, required for short-channel effect control. © 2006 IEEE.
S. Narasimha, K. Onishi, et al.
IEDM 2006
D. Singh, Keith A. Jenkins, et al.
ISDRS 2003
E. Gusev, C. Cabral Jr., et al.
IEDM 2004
H. Nayfeh, S.-J. Jeng, et al.
DRC 2007