IMW 2016
Conference paper

Effect of Read Disturb on Incomplete Blocks in MLC NAND Flash Arrays

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The effect of read disturb on partially programmed blocks of MLC NAND is evaluated using experimental data from 2y-, 1y-and 1x-nm Flash memory devices. We demonstrate that when a partially programmed block is exposed to a large number of reads before it is finalized in terms of page programming, the remaining pages will exhibit a significant bit error-rate (BER) increase. The page-BER is characterized in terms of program-erase cycles and read cycles and is further analyzed based on the programmed threshold voltage distributions. The impact of the page programming algorithm is also discussed.