Publication
IEEE T-ED
Paper

An Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology

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Abstract

This paper describes the extension of “double-poly” self-aligned bipolar technology to include a silicon-filled trench with self-aligned cap oxide isolation, a p<sup>+</sup> polysilicon defined epi-base lateral p-n-p, a p<sup>+</sup> polysilicon defined self-aligned guard-ring Schottky-barrier diode, and p<sup>+</sup> polysilicon resistors. Experimental circuits designed with 1.2-µm design rules have shown switching delays of as small as 73 ps for ECL circuits with FI = FO = 1. ISL circuits built with the same process on the same chip as the ECL circuits exhibit a sub-400-psswitching delay. The performance of the technology has also been demonstrated by a 5-kbit ECL SRAM with a 760-µm<sup>2</sup> Schottky-clamped multi-emitter cell and 1.0-ns access time. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1987

Publication

IEEE T-ED

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