An Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology

Abstract

This paper describes the extension of “double-poly” self-aligned bipolar technology to include a silicon-filled trench with self-aligned cap oxide isolation, a p⁺ polysilicon defined epi-base lateral p-n-p, a p⁺ polysilicon defined self-aligned guard-ring Schottky-barrier diode, and p⁺ polysilicon resistors. Experimental circuits designed with 1.2-µm design rules have shown switching delays of as small as 73 ps for ECL circuits with FI = FO = 1. ISL circuits built with the same process on the same chip as the ECL circuits exhibit a sub-400-psswitching delay. The performance of the technology has also been demonstrated by a 5-kbit ECL SRAM with a 760-µm² Schottky-clamped multi-emitter cell and 1.0-ns access time. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.