Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

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Tetrafluoromethane Injected into a dc Argon Glow Discharge

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Journal of Macromolecular Science: Part A - Chemistry

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Magnetic field control of reactive plasma etching

V.J. Minkiewicz, M. Chen, et al.

Applied Physics Letters

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Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

F. Fracassi, J.W. Coburn

Journal of Applied Physics

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Electron-beam effects in depth profiling measurements with Auger electron spectroscopy

J. Ahn, C.R. Perleberg, et al.

Journal of Applied Physics

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Abstract

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Tetrafluoromethane Injected into a dc Argon Glow Discharge

Magnetic field control of reactive plasma etching

Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

Electron-beam effects in depth profiling measurements with Auger electron spectroscopy