Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Conference paper

PLASMA POTENTIALS IN rf GLOW DISCHARGES.

J.W. Coburn, K. Koehler

Symposium on Plasma Processing 1986

Paper

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

E. Occhiello, F. Garbassi, et al.

Plasma Chemistry and Plasma Processing

Paper

A SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardment

E.-A. Knabbe, J.W. Coburn, et al.

Surface Science

Paper

Sputter deposition of EuO thin films

J.W. Coburn, Kenneth Lee

Journal of Applied Physics

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Abstract

Related

PLASMA POTENTIALS IN rf GLOW DISCHARGES.

On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas

A SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardment

Sputter deposition of EuO thin films