Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Summary Abstract: Diagnostics in plasma processing

J.W. Coburn

JVSTA

Paper

The influence of ion sputtering on the elemental analysis of solid surfaces

J.W. Coburn

Thin Solid Films

Paper

Dual atom beam studies of etching and related surface chemistries

J.W. Coburn

Pure and Applied Chemistry

Paper

Diagnostics of an r.f. sputtering glow discharge - correlation between atomic absorption and mass spectrometry

E.W. Eckstein, J.W. Coburn, et al.

International Journal of Mass Spectrometry and Ion Physics

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Abstract

Related

Summary Abstract: Diagnostics in plasma processing

The influence of ion sputtering on the elemental analysis of solid surfaces

Dual atom beam studies of etching and related surface chemistries

Diagnostics of an r.f. sputtering glow discharge - correlation between atomic absorption and mass spectrometry