Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
There are many examples of situations in which a gas-surface reaction rate is increased when the surface is simultaneously subjected to energetic particle bombardment. There are several possible mechanisms which could be involved in this radiation-enhanced gas-surface chemistry. In this study, the reaction rate of silicon, as determined from the etch yield, is measured during irradiation of the Si surface with 1 keV He+, Ne+, and Ar+ ions while the surface is simultaneously subjected to fluxes of XeF2 or Cl2 molecules. Etch yields as high as 25 Si atoms/ion are observed for XeF2 and Ar+ on Si. A discussion is presented of the extent to which these results clarify the mechanisms responsible for ion-enhanced gas-surface chemistry. © 1981.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Lawrence Suchow, Norman R. Stemple
JES
David B. Mitzi
Journal of Materials Chemistry
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997