Da Zhang, Paul Solomon, et al.
Sensors and Actuators, B: Chemical
A dopant-segregation technique for junction engineering has been demonstrated on trigate transistors using a process flow that does not include raised source/drain epitaxy. It is shown that the dopant-segregation technique reduces the off-state leakage current and improves the on-state performance for NFET devices when compared with control devices built using conventional junction engineering. The dopant-segregation process has no observable impact on PFET device performance. © 1980-2012 IEEE.
Da Zhang, Paul Solomon, et al.
Sensors and Actuators, B: Chemical
Yingtao Yu, Si Chen, et al.
IEEE Electron Device Letters
Chi Xiong, Douglas M. Gill, et al.
FiO 2014
Qing Cao, Shu Jen Han, et al.
Science