Charlton J. Chen, Chad A. Husko, et al.
CLEO 2009
We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification. © 2010 American Institute of Physics.
Charlton J. Chen, Chad A. Husko, et al.
CLEO 2009
Inanc Meric, Cory R. Dean, et al.
IEDM 2011
Charlton J. Chen, Chad A. Husko, et al.
IQEC 2009
Charlton J. Chen, Chad A. Husko, et al.
CLEO 2009