Publication
IEDM 2011
Conference paper

High-frequency performance of graphene field effect transistors with saturating IV-characteristics

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Abstract

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and f max values as high as 34 GHz at 600-nm channel length. Bias dependence of f T and f max and the effect of the ambipolar channel on transconductance and output resistance are also examined. © 2011 IEEE.

Date

Publication

IEDM 2011