Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
The presence of open porosity in a porous interlayer dielectric (ILD) can seriously degrade the ultimate performance and reliability of a device. A simple method for detecting the open porosity in ILDs would facilitate the design of materials with pore morphologies compatible with the required specifications of a particular device. The measurement of effective diffusion coefficients in a low-κ ILD over a range of porosities is shown to permit the detection of open porosity. An example illustrating the simplicity of this method is presented using toluene solvent in a well-characterized porous organosilicate material. The result using this method is consistent with available data in the literature. © 2005 Elsevier B.V. All rights reserved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering