A. Gangulee, F.M. D'Heurle
Thin Solid Films
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
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