Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
CoSi2 formation was studied in the presence of Ti, Ta and W, both for bilayers and as-deposited alloys. Phase formation and preferential orientation of the CoSi2 phase are strongly dependent on the interlayer thickness. For thin interlayers and dilute Co alloys, CoSi 2 nucleation is delayed to higher temperature and CoSi 2(220)//Si(400) nuclei are formed preferentially. The presence of Ti, Ta or W in the grain boundaries of the CoSi layer influences CoSi2 nucleation by enhancing the CoSi grain boundary cohesion and/or reducing grain boundary diffusion. For thicker interlayers (typically >1 nm), the interlayer acts as a diffusion mediating medium, slowing down Co diffusion and thus promoting the formation of a CoSi2 layer that is epitaxially aligned with the Si substrate. © 2004 Elsevier B.V. All rights reserved.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
T.N. Morgan
Semiconductor Science and Technology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films