Qiqing Ouyang, Anita Madan, et al.
MRS Spring Meeting 2006
We review the evolution in interface structure and its impact on electrical properties during the different stages of the growth process of single crystalline SrTiO3/(Ba,Sr)O gate dielectrics on Si(100): Sr barrier synthesis, (Ba,Sr)O template growth, SrTiO3 deposition and recrystallization, and atomic oxygen annealing. Using an optimized deposition scheme, we obtain a metal-insulator-semiconductor capacitance equivalent to 0.5 nm of SiO2 for a 10 unit cell SrTiO3/l unit cell (Ba,Sr)O/p-Si(100) stack. © 2006 Materials Research Society.
Qiqing Ouyang, Anita Madan, et al.
MRS Spring Meeting 2006
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011