Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO₃ gate dielectrics on Si(100)

Abstract

We review the evolution in interface structure and its impact on electrical properties during the different stages of the growth process of single crystalline SrTiO3/(Ba,Sr)O gate dielectrics on Si(100): Sr barrier synthesis, (Ba,Sr)O template growth, SrTiO3 deposition and recrystallization, and atomic oxygen annealing. Using an optimized deposition scheme, we obtain a metal-insulator-semiconductor capacitance equivalent to 0.5 nm of SiO2 for a 10 unit cell SrTiO3/l unit cell (Ba,Sr)O/p-Si(100) stack. © 2006 Materials Research Society.