Conductance in restricted-dimensionality accumulation layers

Abstract

Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance σ=σ0exp[-(T0T)n] is observed, where n=12 for small channel widths and n=13 for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample. © 1982 The American Physical Society.