Publication
Surface Science
Paper

One-dimensional conductance in silicon mosfet's

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Abstract

A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.

Date

01 Jul 1984

Publication

Surface Science

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