O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
A review of hopping conduction in small MOSFET devices at low temperatures is given. The theoretical predictions of Mott, extended to the quasi-one-dimensional limit, will be compared with experiments and it will be shown that in the limit where only a few states exist within a few kBT of the Fermi energy the conduction properties take on a radically different form. Experimental results will be compared to both fluctuation hopping dominated theories as well as resonant tunneling models. © 1986.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES
Kigook Song, Robert D. Miller, et al.
Macromolecules
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures