J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
A review of hopping conduction in small MOSFET devices at low temperatures is given. The theoretical predictions of Mott, extended to the quasi-one-dimensional limit, will be compared with experiments and it will be shown that in the limit where only a few states exist within a few kBT of the Fermi energy the conduction properties take on a radically different form. Experimental results will be compared to both fluctuation hopping dominated theories as well as resonant tunneling models. © 1986.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
John G. Long, Peter C. Searson, et al.
JES
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008