R.F. Broom, P. Wolf
Physical Review B
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.
R.F. Broom, P. Wolf
Physical Review B
P. Guéret, M. Reiser
Applied Physics Letters
M. Reiser, S.S. Lavenberg
Journal of the ACM
P. Vettiger, M. Benedict, et al.
ISLC 1990