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Publication
Electronics Letters
Paper
Computer study of submicrometre F.E.T.S
Abstract
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.