V. Djara, Veeresh Deshpande, et al.
VLSI Technology 2015
We report CMOS-compatible n-channel InGaAs-on-insulator FinFETs obtained using a replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiNx spacers, a scaled high-k/metal gate (capacitance equivalent thickness of ∼ 1.5nm), raised source and drain doped to ∼ 6× 1019/cm3, and fin width scaled down to 15 nm. Very good control of short-channel effects is demonstrated down to a gate length of 50 nm with a minimum subthreshold swing of 92 mV/decade at VDS=0.5V and a drain-induced barrier lowering of 57 mV/V. An ON-state current (ION) of 156μA/μm is also reported for a supply voltage of 0.5 V and a fixed OFF-state current of 100 nA/μm. This ION value is the highest reported to date for CMOS-compatible InGaAs devices integrated on Si.
V. Djara, Veeresh Deshpande, et al.
VLSI Technology 2015
Benedikt Kersting, Vladimir Ovuka, et al.
Scientific Reports
Noelia Vico Triviño, Svenja Mauthe, et al.
ECOC 2020
Lukas Czornomaz, Emanuele Uccelli, et al.
VLSI Technology 2015