About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ESSDERC 2002
Conference paper
CMOS circuit analysis with luminescence measurements and simulations
Abstract
Hot-carriers in MOSFETs are responsible for time-dependent near-infrared emission, synchronous with the switching transitions in CMOS circuits. Fast electrical waveforms propagating through integrated circuits can be effectively measured by means of high sensitivity solid-state photo detectors with sharp time-resolution. Thanks to a time jitter of less than 30ps. We obtained an equivalent analog bandwidth of about 30GHz. We simulate the luminescence waveforms. In-depth insight of circuit behavior is reported by comparing measured and simulated luminescence waveforms, leading to a powerful identification of design errors and failures.