Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
In this paper we report an in-depth analysis of a current crowding phenomenon in a 0.55um CMOS technology. Emission Microscopy (EMMI) technique was used to support the traditional electrical investigation for the interpretation of physical phenomena inside a MOS transistor. We identified a localized increase of the luminescence emission due to a local current crowding of the device under test. We ascribed the origins to a local higher electric field leading to an enhanced hot-carrier regime within the device. We carried out a detailed characterization by means of the joint use of photon emission analysis and electrical measurements. © 2004 Elsevier Ltd. All rights reserved.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Imran Nasim, Melanie Weber
SCML 2024
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
J.C. Marinace
JES