About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Charge trapping centers in N-rich silicon nitride thin films
Abstract
We have examined the behavior of the Si dangling-bond center in regard to charge trapping in N-rich amorphous hydrogenated silicon nitride thin films. The effects of multiple electron and hole injections were monitored by electron paramagnetic resonance. These results continue to support a model in which the Si dangling bond is a negative U defect in N-rich nitrides, and that a change in charge state of pre-existing diamagnetic positively and negatively charged sites is responsible for the memory properties of silicon nitride thin films.