Conference paper
Reflow of copper on ruthenium
C.-C. Yang, Y. Loquet, et al.
ADMETA 2011
Co films were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. X-ray fluorescence spectroscopy determined the Co deposition selectivity as a function of the deposition temperature and substrate materials. The Co/Cu interfacial property was characterized and revealed no detectable oxygen at the interface. The selectivity of the Co deposition process and the property of the resulted Co/Cu interface were further confirmed with time-dependent-dielectric-breakdown and electromigration tests. © 2010 IEEE.
C.-C. Yang, Y. Loquet, et al.
ADMETA 2011
C.-C. Yang, Fenton R. McFeely, et al.
Electrochemical and Solid-State Letters
R. Filippi, J.F. McGrath, et al.
IRPS 2004
M. Tagami, C.-C. Yang, et al.
IITC/MAM 2011