Conference paper
Endurance improvement of Ge2Sb2Te5-based phase change memory
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm. © 2011 IEEE.
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
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ADMETA 2009
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ADMETA 2010
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IITC/AMC 2014