Publication
PVSC 2011
Conference paper

Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique

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Abstract

Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction. © 2011 IEEE.

Date

Publication

PVSC 2011