About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-ED
Paper
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
Abstract
A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of Pt Si high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7-um 2.0 x 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 x 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics. © 1985 IEEE