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Paper
Bilayers with chromium disilicide: Chromium-vanadium
Abstract
The behavior of chromium-vanadium layers deposited in that order on silicon substrates has been studied, as a function of heat treatment, with the aim of determining the difference of mobilities between the silicon and the metal atoms in the two respective disilicides. The motion of the silicon atoms requires temperatures of the order of 500°C, that of the metal atoms temperatures about 300°C higher. The two disilicides, previously reported to be totally soluble at 1500°C, appear to remain totally soluble at least down to 900°C. © 1989.
